Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects-Reference-Cited by-同舟云学术

Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects

Published:2017-07-25 Issue:15 Volume:8 Page:3661-3667
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Polizzotti Alex¹^ORCID,Faghaninia Alireza²,Poindexter Jeremy R.¹^ORCID,Nienhaus Lea¹^ORCID,Steinmann Vera¹,Hoye Robert L. Z.¹^ORCID,Felten Alexandre³,Deyine Amjad⁴,Mangan Niall M.¹,Correa-Baena Juan Pablo¹^ORCID,Shin Seong Sik¹^ORCID,Jaffer Shaffiq⁵,Bawendi Moungi G.¹^ORCID,Lo Cynthia²,Buonassisi Tonio¹

Affiliation:

1. Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States

2. Washington University in St. Louis, 1 Brookings Drive, St. Louis, Missouri 63130, United States

3. Université de Namur, Rue de Bruxelles 61, B-5000 Namur, Belgium

4. TOTAL Solar Research and Development Department, 2 place Jean Millier − La Défense 6, 92078 Paris La Défense Cedex, France

5. TOTAL American Services, Inc., 82 South Street, Hopkington, Massachusetts 01748, United States

Funder

Basic Energy Sciences

Total

Department of Science and Technology, Ministry of Science and Technology

Solar Energy Technologies Program

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.7b01406

Reference53 articles.

1. Photovoltaics Report, Technical Report for Fraunhofer Institute for Solar Energy Systems with Support of PSE AG: Freiburg; November 2016.

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5. Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early stage photovoltaic material

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