Evidence for Pseudocapacitance and Faradaic Charge Transfer in High-Mobility Thin-Film Transistors with Solution-Processed Oxide Dielectrics

Author:

Liang Xiaoci1,Liu Ling1,Cai Guangshuo1,Yang Peng1,Pei Yanli12ORCID,Liu Chuan13ORCID

Affiliation:

1. The State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People’s Republic of China

2. Department of Electronic Communication and Technology, Shenzhen Institute of Information Technology, Shenzhen 518172, People’s Republic of China

3. State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China

Funder

Guangdong Science and Technology Department

National Natural Science Foundation of China

Science and Technology Planning Projects of Guangzhou

Pengcheng Scholar funding of Shenzhen

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3