Unveiling Interstitial Anionic Electron-Driven Ultrahigh K-Ion Storage Capacity in a Novel Two-Dimensional Electride Exemplified by Sc3Si2

Author:

Chen Yuanzheng123ORCID,Qin Haifei2ORCID,Zhou Jun34ORCID,Yang Tong35,Sun Bai2ORCID,Ni Yuxiang2ORCID,Wang Hongyan2ORCID,Redfern Simon A. T.6ORCID,Miao Maosheng7ORCID,Lin Hai-Qing1,Feng Yuan Ping3ORCID

Affiliation:

1. Beijing Computational Science Research Center, Haidian District, Beijing 100193, China

2. School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, China

3. Department of Physics and Centre for Advanced Two-Dimensional Materials, National University of Singapore, Singapore 117551, Singapore

4. Institute of Materials Research & Engineering, A*STAR (Agency for Science Technology and Research), 2 Fusionopolis Way, Innovis, Singapore 138634, Singapore

5. Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong 999077, P. R. China

6. Asian School of the Environment and School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore

7. Department of Chemistry and Biochemistry, California State University, Northridge, Northridge, California 91330, United States

Funder

Ministry of Education - Singapore

China Postdoctoral Science Foundation

Central University Basic Research Fund of China

Department of Science and Technology of Sichuan Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

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