Transient Mesoscopic Immiscibility, Viscosity Anomaly, and High Internal Pressure at the Semiconductor–Metal Transition in Liquid Ga<sub>2</sub>Te<sub>3</sub>-Reference-Cited by-同舟云学术

Transient Mesoscopic Immiscibility, Viscosity Anomaly, and High Internal Pressure at the Semiconductor–Metal Transition in Liquid Ga₂Te₃

Published:2022-11-16 Issue:46 Volume:13 Page:10843-10850
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Kassem Mohammad¹^ORCID,Benmore Chris J.²^ORCID,Usuki Takeshi³^ORCID,Ohara Koji⁴^ORCID,Tverjanovich Andrey⁵^ORCID,Bokova Maria¹,Brazhkin Vadim V.⁶^ORCID,Bychkov Eugene¹^ORCID

Affiliation:

1. Université du Littoral Côte d’Opale, 59140Dunkerque, France

2. X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois60439, United States

3. Faculty of Science, Yamagata University, Yamagata990-8560, Japan

4. Research and Utilization Division, Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo, Hyogo679-5198, Japan

5. Institute of Chemistry, St. Petersburg State University, St. Petersburg198504, Russia

6. Institute for High Pressure Physics, Russian Academy of Sciences, Troitsk, Moscow108840, Russia

Funder

European Regional Development Fund

R?gion Hauts-de-France

Minist?re de l'Enseignement Sup?rieur et de la Recherche Scientifique

U.S. Department of Energy

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.2c02899

Reference80 articles.

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5. Atypical phase-change alloy Ga2Te3: atomic structure, incipient nanotectonic nuclei, and multilevel writing

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