Symmetry-Based Tight Binding Modeling of Halide Perovskite Semiconductors-Reference-Cited by-同舟云学术

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Symmetry-Based Tight Binding Modeling of Halide Perovskite Semiconductors

Published:2016-09-16 Issue:19 Volume:7 Page:3833-3840
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Boyer-Richard Soline¹,Katan Claudine²,Traoré Boubacar²,Scholz Reinhard³,Jancu Jean-Marc¹,Even Jacky¹

Affiliation:

1. UMR FOTON, CNRS, INSA−Rennes, F-35708 Rennes, France

2. Institut des Sciences Chimiques de Rennes, UMR 6226, CNRS, Université de Rennes 1, F-35042 Rennes, France

3. Dresden Integrated Center for Applied Physics and Photonics Materials, Technische Universität Dresden, Dresden 01069, Germany

Funder

H2020

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.6b01749

Reference55 articles.

1. Organometal Halide Perovskites as Visible-Light Sensitizers for Photovoltaic Cells

2. 6.5% efficient perovskite quantum-dot-sensitized solar cell

3. Efficient Hybrid Solar Cells Based on Meso-Superstructured Organometal Halide Perovskites

4. Lead Iodide Perovskite Sensitized All-Solid-State Submicron Thin Film Mesoscopic Solar Cell with Efficiency Exceeding 9%

5. High-efficiency solution-processed perovskite solar cells with millimeter-scale grains

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