Decoupling of the Electrical and Thermal Transports in Strongly Coupled Interlayer Materials-Reference-Cited by-同舟云学术

Decoupling of the Electrical and Thermal Transports in Strongly Coupled Interlayer Materials

Published:2021-08-11 Issue:32 Volume:12 Page:7832-7839
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Yang Kaike¹^ORCID,Xiao Jin²³,Ren Zhihui²⁴,Wei Zhongming²⁴^ORCID,Luo Jun-Wei²⁴^ORCID,Wei Su-Huai⁵^ORCID,Deng Hui-Xiong²⁴^ORCID

Affiliation:

1. Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications, Department of Physics, Hunan Normal University, Changsha 410081, China

2. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

3. School of Science, Hunan University of Technology, Zhuzhou 412007, China

4. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

5. Beijing Computational Science Research Center, Beijing 100193, China

Funder

Ministry of Science and Technology of the People's Republic of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.1c01783

Reference51 articles.

1. Advances in thermoelectric materials research: Looking back and moving forward

2. When thermoelectrics reached the nanoscale

3. Better thermoelectrics through glass-like crystals

4. Complex thermoelectric materials

5. Dense dislocation arrays embedded in grain boundaries for high-performance bulk thermoelectrics

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-mobility two-dimensional MA2N4 ( M = Mo, W; A = Si, Ge) family for transistors;Physical Review B;2024-03-19

2. Strong anharmonicity-assisted low lattice thermal conductivities and high thermoelectric performance in double-anion Mo₂ AB ₂ (A = S, Se, Te; B = Cl, Br, I) semiconductors;Chinese Physics B;2023-09-01

3. Engineering Interface Defects and Interdiffusion at the Degenerate Conductive In₂O₃/Al₂O₃ Interface for Stable Electrodes in a Saline Solution;ACS Applied Materials & Interfaces;2023-07-24

4. Enhancement of the electrical properties of Au/MgSe/Au microwave resonators via pulsed laser welding of MgSe and Au nanosheets;Applied Physics A;2023-03-25

5. Advances and Challenges in DFT-based Energy Materials Design;Chinese Physics B;2022-08-16