High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed-Reference-Cited by-同舟云学术

High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed

Published:2023-01-12 Issue:2 Volume:14 Page:592-597
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Ge Lei¹^ORCID,Li Bin¹,Li Guo¹,Wang Xiwei¹,Cheong Kuan Yew²,Peng Yan¹,Han Jisheng¹,Li Shuqiang¹,Cui Yingxin¹,Zhong Yu¹,Cui Peng¹,Wang Dufu³,Xu Mingsheng¹,Xu Xiangang¹

Affiliation:

1. Institute of Novel Semiconductor Materials and State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China

2. Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, University Sains Malaysia, 14300Nibong Tebal, Penang, Malaysia

3. Jinan Diamond Technology Co., Ltd., Jinan250100, China

Funder

Major Scientific and Technological Innovation Project of Shandong Province

Natural Science Foundation of Shandong Province

Tang Scholars Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.2c03637

Reference38 articles.