Nanoscale-Thick CuPc/β-Ga<sub>2</sub>O<sub>3</sub> p–n Junctions for Harsh-Environment-Resistant Self-Powered Deep-UV Photodetectors-Reference-Cited by-同舟云学术

Nanoscale-Thick CuPc/β-Ga₂O₃ p–n Junctions for Harsh-Environment-Resistant Self-Powered Deep-UV Photodetectors

Published:2023-02-22 Issue:5 Volume:6 Page:3856-3862
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Zhao Tianli¹,He Huaile¹,Wu Chao¹^ORCID,Lai Li¹,Ma Yanxiu¹,Yang Hu¹,Hu Haizheng¹,Liu Aiping¹^ORCID,Guo Daoyou¹^ORCID,Wang Shunli¹

Affiliation:

1. Center for Optoelectronics Materials and Devices & Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China

Funder

Zhejiang Sci-Tech University

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Innovation Center of Radiation Application

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.2c05499

Reference39 articles.

1. A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

2. Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications

3. Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

4. Review of self-powered solar-blind photodetectors based on Ga2O3

5. Avalanche solar blind photodetectors with high responsivity based on MgO/MgZnO heterostructures

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