Ultrasensitive Dual-Junction-Coupled n-ZnO/n-Ga<sub>2</sub>O<sub>3</sub>/p-GaN-Based Self-Driven Broad-Band Ultraviolet Photodetector-Reference-Cited by-同舟云学术

Ultrasensitive Dual-Junction-Coupled n-ZnO/n-Ga₂O₃/p-GaN-Based Self-Driven Broad-Band Ultraviolet Photodetector

Published:2024-02-16 Issue:3 Volume:11 Page:1293-1302
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Zhu Hongyi¹,Chen Xingchi¹,Fan Qixian¹,Mao Jiaxing¹,Chen Jian¹,Li Mingkai¹,Lu Yinmei¹,He Yunbin¹^ORCID

Affiliation:

1. Ministry of Education Key Laboratory of Green Preparation and Application for Functional Materials, Hubei Key Laboratory of Polymer Materials, Center of Advanced Wide-Bandgap Semiconductor Materials and Devices, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China

Funder

National Natural Science Foundation of China

Program for Science and Technology Innovation Team in Colleges of Hubei Province

Hubei International Science and Technology Cooperation Project

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.3c01812

Reference36 articles.

1. Graphene-β -Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application

2. Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications

3. Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga2O3-Based Heterojunction