Engineering the Interface of Cu/MoS2 Nanostructures for Improved Charge Transfer for Applications as PEC Anode Materials
Author:
Affiliation:
1. Key Laboratory of Photonic and Electric Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, Heilongjiang Province, China
Funder
Harbin Normal University
Natural Science Foundation of Heilongjiang Province
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.2c05350
Reference81 articles.
1. The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces
2. Bandgap Engineering of Strained Monolayer and Bilayer MoS2
3. A first principle Comparative study of electronic and optical properties of 1H – MoS2 and 2H – MoS2
4. Selective and efficient electrochemical biosensing of ultrathin molybdenum disulfide sheets
5. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
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