The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces
Author:
Affiliation:
1. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
2. Texas Instruments, Dallas, Texas 75243, United States
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl403465v
Reference30 articles.
1. Single-layer MoS2 transistors
2. Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering
3. Channel Length Scaling of MoS2MOSFETs
4. High Performance Multilayer MoS2 Transistors with Scandium Contacts
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