Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots-Reference-Cited by-同舟云学术

Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots

Published:2014-09-08 Issue:10 Volume:14 Page:5616-5620
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Xiao Xiaoyin¹,Fischer Arthur J.¹,Wang George T.¹,Lu Ping¹,Koleske Daniel D.¹,Coltrin Michael E.¹,Wright Jeremy B.¹,Liu Sheng¹,Brener Igal¹,Subramania Ganapathi S.¹,Tsao Jeffrey Y.¹

Affiliation:

1. Solid-State Lighting Science Energy Frontier Research Center and ‡Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl502151k

Reference29 articles.

1. A gallium nitride single-photon source operating at 200 K

2. Optical microcavities

3. Applications of Quantum Semiconductor Structures

4. Electron–electron and electron‐hole interactions in small semiconductor crystallites: The size dependence of the lowest excited electronic state

5. Preparation of Monodisperse CdS Nanocrystals by Size Selective Photocorrosion

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