Atomic Layer Deposition of Nanocrystalline-As-Deposited (GeTe)x(Sb2Te3)1–x Films for Endurable Phase Change Memory-Reference-Cited by-同舟云学术

Atomic Layer Deposition of Nanocrystalline-As-Deposited (GeTe)x(Sb2Te3)1–x Films for Endurable Phase Change Memory

Published:2019-09-18 Issue:21 Volume:31 Page:8752-8763
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Park Eui-Sang¹,Yoo Chanyoung¹,Kim Woohyun¹^ORCID,Ha Manick¹,Jeon Jeong Woo¹,Eom Taeyong²,Lee Yoon Kyeung¹,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Republic of Korea

2. Center for Thin Film Materials, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea

Funder

National Research Foundation of Korea

Semiconductor Research Corporation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.9b02533

Reference35 articles.

1. Hwang, C. S.; Yoo, C. Y. Atomic Layer Deposition for Semiconductors; Springer, 2013; pp 32–44.

2. Phase-change materials for rewriteable data storage

3. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory

4. Boybat, I.; Le Gallo, M.; Moraitis, T.; Leblebici, Y.; Sebastian, A.; Eleftheriou, E. Stochastic Weight Updates in Phase-Change Memory-Based Synapses and Their Influence on Artificial Neural Networks, 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME 2017); IEEE, 2017; pp 13–16.

5. Structural characteristics of GeTe-rich GeTe–Sb2Te3 pseudobinary metastable crystals

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