Direct Growth of Bi<sub>2</sub>SeO<sub>5</sub> Thin Films for High-k Dielectrics via Atomic Layer Deposition-Reference-Cited by-同舟云学术

Direct Growth of Bi₂SeO₅ Thin Films for High-k Dielectrics via Atomic Layer Deposition

Published:2024-08-05 Issue:33 Volume:18 Page:22071-22079
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Park Hyeonbin¹²,Hwang Jae Hun¹³,Oh Seung Hoon¹,Ryu Jin Joo¹³,Jeon Kanghyeok¹,Kang Minsoo²^ORCID,Chai Hyun-Jun²,Ham Ayoung²,Kim Gun Hwan³⁴^ORCID,Kang Kibum²⁵^ORCID,Eom Taeyong¹⁶^ORCID

Affiliation:

1. Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Daejeon, Yuseong-gu 34114, Republic of Korea

2. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Daejeon, Yuseong-gu 34141, Republic of Korea

3. Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, Seodaemun-gu 03722, Republic of Korea

4. Department of System Semiconductor Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea

5. Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Daejeon, Yuseong-gu 34141, Republic of Korea

6. Department of Semiconductor System Engineering, Sejong University, 209 Neungdong-ro, Seoul, Gwangjin-gu 05006, Republic of Korea

Funder

Korea Research Institute of Chemical Technology

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.4c05273

Reference34 articles.

1. Promises and prospects of two-dimensional transistors

2. Transistors based on two-dimensional materials for future integrated circuits

3. Insulators for 2D nanoelectronics: the gap to bridge

4. Disorder in van der Waals heterostructures of 2D materials

5. Boron nitride substrates for high-quality graphene electronics