Digenite (Cu9S5): Layered p-Type Semiconductor Grown by Reactive Annealing of Copper-Reference-Cited by-同舟云学术

Digenite (Cu9S5): Layered p-Type Semiconductor Grown by Reactive Annealing of Copper

Published:2018-03-12 Issue:7 Volume:30 Page:2379-2388
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Itzhak Anat¹,Teblum Eti¹,Girshevitz Olga²,Okashy Sivan¹,Turkulets Yury³,Burlaka Luba²,Cohen-Taguri Gili²,Shawat Avraham Efrat¹,Noked Malachi¹,Shalish Ilan³,Nessim Gilbert Daniel¹^ORCID

Affiliation:

1. The Department of Chemistry and Institute of Nanotechnology, Bar-Ilan University, Ramat Gan 52900, Israel

2. Institute of Nanotechnology & Advanced Materials, Bar-Ilan University, Ramat Gan 52900, Israel

3. Department of Electrical and Computer Engineering, Ben Gurion University of the Negev, Beer Sheva 8410501, Israel

Funder

Ministry of Science, Technology and Space

Prime Minister?s Office, Government of Israel

??? International Atomic Energy Agency (IAEA) ???

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.8b00191

Reference98 articles.

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4. Graphene: Electronic and Photonic Properties and Devices

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