Spontaneous Direct Band Gap, High Hole Mobility, and Huge Exciton Energy in Atomic-Thin TiO2 Nanosheet-Reference-Cited by-同舟云学术

Spontaneous Direct Band Gap, High Hole Mobility, and Huge Exciton Energy in Atomic-Thin TiO2 Nanosheet

Published:2018-08-27 Issue:18 Volume:30 Page:6449-6457
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Zhou Wei¹²^ORCID,Umezawa Naoto²^ORCID,Ma Renzhi²^ORCID,Sakai Nobuyuki²^ORCID,Ebina Yasuo²,Sano Koki³⁴,Liu Mingjie⁴^ORCID,Ishida Yasuhiro⁴,Aida Takuzo³⁴^ORCID,Sasaki Takayoshi²^ORCID

Affiliation:

1. Department of Applied Physics, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072, P. R. China

2. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1, Namiki, Tsukuba, Ibaraki 305-0044, Japan

3. Department of Chemistry and Biotechnology, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

4. RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

Funder

Natural Science Foundation of Tianjin City

Ministry of Education, Culture, Sports, Science and Technology

Precursory Research for Embryonic Science and Technology

China Scholarship Council

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

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