Direct CVD Growth of a Graphene/MoS2 Heterostructure with Interfacial Bonding for Two-Dimensional Electronics-Reference-Cited by-同舟云学术

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Direct CVD Growth of a Graphene/MoS2 Heterostructure with Interfacial Bonding for Two-Dimensional Electronics

Published:2020-05-06 Issue:11 Volume:32 Page:4544-4552
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Lee Eunho¹,Lee Seung Goo²,Lee Wi Hyoung³^ORCID,Lee Hyo Chan¹,Nguyen Nguyen Ngan¹,Yoo Min Seok¹,Cho Kilwon¹^ORCID

Affiliation:

1. Department of Chemical Engineering and Center for Advanced Soft Electronics, Pohang University of Science and Technology, Pohang 37673, Korea

2. Department of Chemistry, University of Ulsan, Ulsan 44610, Korea

3. Department of Organic and Nano System Engineering, Konkuk University, Seoul 05029, Korea

Funder

Ministry of Science, ICT and Future Planning

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.0c00503

Reference46 articles.

1. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties

2. New Discoveries and Opportunities from Two-Dimensional Materials

3. Synthesis of Large-Area MoS2Atomic Layers with Chemical Vapor Deposition

4. Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

5. Stacking of Two-Dimensional Materials in Lateral and Vertical Directions

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3. Optimizing Ultrathin 2D Transistors for Monolithic 3D Integration: A Study on Directly Grown Nanocrystalline Interconnects and Buried Contacts;Advanced Materials;2024-04-22

4. Realization of low potential barrier in MoS₂/rGO heterojunction with enhanced electrical conductivity for thin film thermoelectric applications;Nanotechnology;2024-03-01

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