Selectivity in Thermal Atomic Layer Etching Using Sequential, Self-Limiting Fluorination and Ligand-Exchange Reactions-Reference-Cited by-同舟云学术

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Selectivity in Thermal Atomic Layer Etching Using Sequential, Self-Limiting Fluorination and Ligand-Exchange Reactions

Published:2016-10-19 Issue:21 Volume:28 Page:7657-7665
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Lee Younghee¹,Huffman Craig²,George Steven M.¹³

Affiliation:

1. Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309, United States

2. SUNY Poly SEMATECH, Albany, New York 12203, United States

3. Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309, United States

Funder

Division of Chemistry

Intel Corporation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.6b02543

Reference42 articles.

1. Atomic Layer Etching: An Industry Perspective

2. Overview of atomic layer etching in the semiconductor industry

3. Plasma atomic layer etching using conventional plasma equipment

4. Atomic Layer Etching at the Tipping Point: An Overview

5. Prospects for Thermal Atomic Layer Etching Using Sequential, Self-Limiting Fluorination and Ligand-Exchange Reactions

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3. Selectivity between SiO₂ and SiN_x during Thermal Atomic Layer Etching Using Al(CH₃)₃/HF and Spontaneous Etching Using HF and Effect of HF + NH₃ Codosing;Chemistry of Materials;2024-07-01

4. Thermal Atomic Layer Etching of Gold Using Sulfuryl Chloride for Chlorination and Triethylphosphine for Ligand Addition;Chemistry of Materials;2024-05-13

5. Thermal Atomic Layer Etching of Molybdenum Using Sequential Oxidation and Deoxychlorination Reactions;Chemistry of Materials;2024-01-29

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