Growth Mechanism and Film Properties of Atomic-Layer-Deposited Titanium Oxysulfide-Reference-Cited by-同舟云学术

Growth Mechanism and Film Properties of Atomic-Layer-Deposited Titanium Oxysulfide

Published:2022-08-22 Issue:17 Volume:34 Page:7750-7760
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

van Kasteren Jeroen G. A.¹,Basuvalingam Saravana B.¹^ORCID,Mattinen Miika¹,Bracesco Andrea E. A.¹,Kessels Wilhelmus M. M.¹^ORCID,Bol Ageeth A.¹²^ORCID,Macco Bart¹^ORCID

Affiliation:

1. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

2. Department of Chemistry, University of Michigan, 930 N University Ave, Ann Arbor, Michigan 48109, United States

Funder

Stichting voor de Technische Wetenschappen

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.2c01033

Reference37 articles.

1. Evaluation of ZnSnO buffer layers for CuIn0.5Ga0.5Se2 solar cells

2. Transparent Electrodes for Efficient Optoelectronics

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4. Carrier‐selective contacts using metal compounds for crystalline silicon solar cells

5. Zn(O,S) buffer layers by atomic layer deposition in Cu(In,Ga)Se2 based thin film solar cells: Band alignment and sulfur gradient

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