Defect Chemistry and Doping of Ultrawide Band Gap (III)BO<sub>3</sub> Compounds-Reference-Cited by-同舟云学术

Defect Chemistry and Doping of Ultrawide Band Gap (III)BO₃ Compounds

Published:2023-11-22 Issue:23 Volume:35 Page:9952-9962
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Garrity Emily M.¹^ORCID,Egbo Kingsley²,Lee Cheng-Wei³,Zakutayev Andriy²^ORCID,Stevanović Vladan³

Affiliation:

1. Mines/NREL Advanced Energy Systems Graduate Program, Colorado School of Mines, Golden, Colorado 80401, United States

2. Materials Science Center, National Renewable Energy Laboratory (NREL), Golden, Colorado 80401, United States

3. Materials & Metallurgical Engineering, Colorado School of Mines, Golden, Colorado 80401, United States

Funder

National Renewable Energy Laboratory

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.3c01754

Reference58 articles.

1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

2. Tolbert, L. M.; King, T. J.; Ozpineci, B.; Campbell, J.; Muralidharan, G.; Rizy, D.; Sabau, A.; Zhang, H.; Zhang, W.; Xu, Y.; Huq, H.; Liu, H. Power Electronic for Distributed Energy Systems and Transmission and Distribution Applications; Technical Report No. ORNL/TM. 2005/230; UT-Battelle, LLC, Oak Ridge National Laboratory: 2005.

3. Bhalla, A. In Disruptive Wide Bandgap Semiconductors. Related Technologies, and Their Applications; Sharma, Y. K., Ed.InTech: 2018; pp 85–101.

4. A Practical Application of Commercial 3.3KV, 750A SiC Modules

5. SiC MOSFET. GeneSiC Semiconductor Inc. https://genesicsemi.com/sic-mosfet/ (accessed September 19, 2023).