Ultrahigh Carrier Mobility in the Two-Dimensional Semiconductors B8Si4, B8Ge4, and B8Sn4-Reference-Cited by-同舟云学术

Ultrahigh Carrier Mobility in the Two-Dimensional Semiconductors B8Si4, B8Ge4, and B8Sn4

Published:2021-08-11 Issue:16 Volume:33 Page:6475-6483
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Sun Minglei¹^ORCID,Luo Yi²^ORCID,Yan Yuan¹,Schwingenschlögl Udo¹^ORCID

Affiliation:

1. Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

2. Jiangsu Key Laboratory for Advanced Metallic Materials and School of Materials Science and Engineering, Southeast University, Nanjing 211189, China

Funder

King Abdullah University of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.1c01824

Reference45 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional semiconductors for transistors

3. Generalized scale length for two-dimensional effects in MOSFETs

4. Ultrahigh electron mobility in suspended graphene

5. Graphene transistors

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