Mechanical Properties of Silicon Carbide Nanowires: Effect of Size-Dependent Defect Density-Reference-Cited by-同舟云学术

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Mechanical Properties of Silicon Carbide Nanowires: Effect of Size-Dependent Defect Density

Published:2014-01-07 Issue:2 Volume:14 Page:754-758
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Cheng Guangming¹,Chang Tzu-Hsuan¹,Qin Qingquan¹,Huang Hanchen²,Zhu Yong¹

Affiliation:

1. Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States

2. Department of Mechanical and Industrial Engineering, Northeastern University, Boston, Massachusetts 02115, United States

Funder

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl404058r

Reference30 articles.

1. Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap

2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

3. Neutron displacement damage cross sections for SiC

4. Nanoelectronics from the bottom up

5. SiC nanowires: material and devices

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