Step-Induced Anisotropic Growth of Pentacene Thin Film Crystals on a Hydrogen-Terminated Si(111) Surface-Reference-Cited by-同舟云学术

Step-Induced Anisotropic Growth of Pentacene Thin Film Crystals on a Hydrogen-Terminated Si(111) Surface

Published:2007-01-06 Issue:2 Volume:7 Page:439-444
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Nishikata Susumu¹,Sazaki Gen¹,Takeuchi Toshihiko¹,Usami Noritaka¹,Suto Shozo¹,Nakajima Kazuo¹

Affiliation:

1. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 Japan, Center for Interdisciplinary Research, Tohoku University, Aramaki, Aoba-ku, Sendai 980-8578, Japan, and Department of Physics, Graduate School of Science, Tohoku University, Aramaki, Aoba-ku, Sendai 980-8578, Japan

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg060486g

Reference15 articles.

1. Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate Insulators

2. Logic Gates Made from Polymer Transistors and Their Use in Ring Oscillators

3. Temperature-independent transport in high-mobility pentacene transistors

4. Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate

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