Tuning Hydrogenated Silicon, Germanium, and SiGe Nanocluster Properties Using Theoretical Calculations and a Machine Learning Approach
Author:
Affiliation:
1. Auburn University, Department of Chemical Engineering, Auburn, Alabama 36849, United States
Funder
Auburn University
Publisher
American Chemical Society (ACS)
Subject
Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpca.8b09797
Reference76 articles.
1. The revolution in SiGe: impact on device electronics
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4. Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors
5. Semiconductor quantum dots and related systems: Electronic, optical, luminescence and related properties of low dimensional systems
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