A Computational Study on the Ground and Excited States of Nickel Silicide-Reference-Cited by-同舟云学术

A Computational Study on the Ground and Excited States of Nickel Silicide

Published:2015-09-03 Issue:37 Volume:119 Page:9630-9635
ISSN:1089-5639
Container-title:The Journal of Physical Chemistry A
language:en
Short-container-title:J. Phys. Chem. A

Author:

Schoendorff George¹,Morris Alexis R.¹,Hu Emily D.¹,Wilson Angela K.¹

Affiliation:

1. Department of Chemistry and Center for Advanced Scientific Computing and Modeling (CASCaM), University of North Texas, Denton, Texas 76203-5017, United States

Funder

Division of Chemistry

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpca.5b05661

Reference45 articles.

1. Thermodynamics of solid transition-metal silicides

2. Silicide thin films and their applications in microelectronics

3. A tight-binding molecular dynamics study of Ni Si binary clusters

4. Towards implementation of a nickel silicide process for CMOS technologies

5. Schottky barrier height and interface chemistry of annealed metal contacts to alpha 6H‐SiC: Crystal face dependence

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