Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor-Reference-Cited by-同舟云学术

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Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor

Published:2013-04-17 Issue:16 Volume:117 Page:8468-8474
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Mentovich Elad D.,Rosenberg-Shraga Natalie,Kalifa Itsik,Gozin Michael,Mujica Vladimiro¹²³,Hansen Thorsten⁴,Richter Shachar

Affiliation:

1. Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604, United States

2. Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States

3. Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States

4. Department of Chemical Physics, Lund University, Box 124, SE-21000 Lund, Sweden

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp311875g

Reference55 articles.

1. Nuclear Coupling and Polarization in Molecular Transport Junctions: Beyond Tunneling to Function

2. Molecular Transport Junctions: Clearing Mists

3. Electron Transport in Molecular Wire Junctions

4. Anomalous gate dependence of the Kondo effect in single-molecule transistors

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