Anomalous gate dependence of the Kondo effect in single-molecule transistors-Reference-Cited by-同舟云学术

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Anomalous gate dependence of the Kondo effect in single-molecule transistors

Published:2008-04 Issue:5-9 Volume:403 Page:1526-1528
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Natelson D.,Yu L.H.,Keane Z.K.,Ciszek J.W.,Tour J.M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Kondo effect in a single-electron transistor

2. A Tunable Kondo Effect in Quantum Dots

3. Resistance Minimum in Dilute Magnetic Alloys

4. Scaling Theory of the Asymmetric Anderson Model

5. From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Electrode–Molecule Binding and Junction Geometry on the Single-Molecule Conductance of bis-2,2′:6′,2″-Terpyridine-based Complexes;Inorganic Chemistry;2016-02-24

2. Quantum interference in off-resonant transport through single molecules;Physical Review B;2014-09-09

3. Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor;The Journal of Physical Chemistry C;2013-04-17

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