Assessment of the Biosensing Capabilities of SiGe Heterojunction Negative Capacitance-Vertical Tunnel Field-Effect Transistor-Reference-Cited by-同舟云学术

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Assessment of the Biosensing Capabilities of SiGe Heterojunction Negative Capacitance-Vertical Tunnel Field-Effect Transistor

Published:2024-01-17 Issue:2 Volume:7 Page:812-826
ISSN:2576-6422
Container-title:ACS Applied Bio Materials
language:en
Short-container-title:ACS Appl. Bio Mater.

Author:

Singh Shailendra¹^ORCID,Agnihotri Suneet Kumar²,Bagga Navjeet³,Samajdar Dip Prakash⁴^ORCID

Affiliation:

1. ECE, Pranveer Singh Institute of Technology, Kanpur 209305, India

2. ECE, BMS Institute of Technology and Management, Bangaluru 560064, India

3. School of Electrical Sciences, Indian Institute of Technology, Bhubaneswar 752050, India

4. ECE, PDPM Indian Institute of Information Technology, Design and Manufacturing, Jabalpur 482005, India

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsabm.3c00738

Reference38 articles.

1. On the performance limits for Si MOSFETs: a theoretical study

2. Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs

3. Investigation of N + SiGe juntionless vertical TFET with gate stack for gas sensing application

4. On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors

5. Label-free biosensor using nanogap embedded dielectric modulated schottky tunneling source impact ionization MOS

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1. Optical assessment of vertical TFET based on heterojunction of GaSb-Si;Micro and Nanostructures;2024-11

2. Low-bandgap material engineering based TFET device for next-generation biosensor application-A comprehensive review on device structure and sensitivity;Micro and Nanostructures;2024-10

3. Synergistic Effect of Ferroelectric and HfO₂/SiO₂ Hetero dielectrics in Junctionless FET for Analog and RF Applications;Advanced Theory and Simulations;2024-06-22

4. Deciphering Phenomenal Performance with Gate-All-Around Strained Heterostructure Nanotube Tunneling FET (TFET) for better Drive Currents and Steep Subthreshold Slope;2024 International Conference on Integrated Circuits, Communication, and Computing Systems (ICIC3S);2024-06-08

5. Evaluation of Design and Performance of Biosensor Utilizing Ferroelectric Vertical Tunnel Field-Effect Transistor (V-TFET);Silicon;2024-04-03

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