Guided VLS Growth of Epitaxial Lateral Si Nanowires-Reference-Cited by-同舟云学术

Guided VLS Growth of Epitaxial Lateral Si Nanowires

Published:2013-08-02 Issue:8 Volume:13 Page:3878-3883
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Rathi Somilkumar J.¹,Smith David J.²,Drucker Jeff²

Affiliation:

1. Materials Science and Engineering, School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287-6106, United States

2. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl401962q

Reference24 articles.

1. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

2. A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

3. Guided Growth of Millimeter-Long Horizontal Nanowires with Controlled Orientations

4. Horizontal growth and in situ assembly of oriented zinc oxide nanowires

5. Planar GaAs Nanowires on GaAs (100) Substrates: Self-Aligned, Nearly Twin-Defect Free, and Transfer-Printable

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