Reliable Control of Filament Formation in Resistive Memories by Self-Assembled Nanoinsulators Derived from a Block Copolymer-Reference-Cited by-同舟云学术

Reliable Control of Filament Formation in Resistive Memories by Self-Assembled Nanoinsulators Derived from a Block Copolymer

Published:2014-09-11 Issue:9 Volume:8 Page:9492-9502
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

You Byoung Kuk¹,Park Woon Ik¹,Kim Jong Min¹,Park Kwi-Il¹,Seo Hyeon Kook¹²,Lee Jeong Yong¹²,Jung Yeon Sik¹,Lee Keon Jae¹

Affiliation:

1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea

2. Center for Nano Reactions, Institute for Basic Science, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn503713f

Reference48 articles.

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3. Resistive switching in transition metal oxides

4. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

5. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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