The Use of Combinatorial Chemical Vapor Deposition in the Synthesis of Ti3-δO4N with 0.06 < δ < 0.25: A Titanium Oxynitride Phase Isostructural to Anosovite-Reference-Cited by-同舟云学术

The Use of Combinatorial Chemical Vapor Deposition in the Synthesis of Ti3-δO4N with 0.06 < δ < 0.25: A Titanium Oxynitride Phase Isostructural to Anosovite

Published:2007-11-21 Issue:50 Volume:129 Page:15541-15548
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Hyett Geoffrey¹,Green Mark A.¹,Parkin Ivan P.¹

Affiliation:

1. Contribution from the Christopher Ingold Laboratory, University College London, 20 Gordon Street, London, WC1H 0AJ, United Kingdom, and NIST Center for Neutron Research, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899-8563

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja073355s

Reference42 articles.

1. InGaN-based violet laser diodes

2. Recent Developments in Nitride Chemistry

3. Growth and Properties of LPCVD Titanium Nitride as a Diffusion Barrier for Silicon Device Technology

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