Ambipolar-to-Unipolar Conversion of Carbon Nanotube Transistors by Gate Structure Engineering-Reference-Cited by-同舟云学术

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Ambipolar-to-Unipolar Conversion of Carbon Nanotube Transistors by Gate Structure Engineering

Published:2004-03-31 Issue:5 Volume:4 Page:947-950
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lin Yu-Ming¹,Appenzeller Joerg¹,Avouris Phaedon¹

Affiliation:

1. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl049745j

Reference21 articles.

1. Carbon Nanotubes

2. Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes

3. High-κ dielectrics for advanced carbon-nanotube transistors and logic gates

4. Controlling doping and carrier injection in carbon nanotube transistors

5. Carbon Nanotube Inter- and Intramolecular Logic Gates

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