Monitoring of the Initial Stages of Diamond Growth on Aluminum Nitride Using In Situ Spectroscopic Ellipsometry-Reference-Cited by-同舟云学术

Monitoring of the Initial Stages of Diamond Growth on Aluminum Nitride Using In Situ Spectroscopic Ellipsometry

Published:2023-08-11 Issue:33 Volume:8 Page:30442-30449
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Leigh William¹²^ORCID,Mandal Soumen¹,Cuenca Jerome A.¹^ORCID,Wallis David³⁴,Hinz Alexander M.⁴^ORCID,Oliver Rachel A.⁴^ORCID,Thomas Evan L. H.¹,Williams Oliver¹

Affiliation:

1. School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, U.K.

2. EPSRC Centre for Diamond Science and Technology, Coventry CV4 7AL, U.K.

3. School of Engineering, Cardiff University, Cardiff CF10 3AT, U.K.

4. Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, U.K.

Funder

Engineering and Physical Sciences Research Council

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acsomega.3c03609

Reference50 articles.

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3. Embedded Cooling for Wide Bandgap Power Amplifiers: A Review

4. Lee, S.; Vetury, R.; Brown, J. D.; Gibb, S. R.; Cai, W. Z.; Sun, J.; Green, D. S.; Shealy, J. Reliability Assessment of AlGaN/GaN HEMT Technology on SiC for 48 V Applications. 2008 IEEE International Reliability Physics Symposium; Institute of Electrical and Electronics Engineers: Phoenix, AZ, USA, 2008; pp 446–449.

5. Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing

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