Continuous Large Area Monolayered Molybdenum Disulfide Growth Using Atmospheric Pressure Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Continuous Large Area Monolayered Molybdenum Disulfide Growth Using Atmospheric Pressure Chemical Vapor Deposition

Published:2023-03-15 Issue:12 Volume:8 Page:10930-10940
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Prasad Rakesh K.¹,Singh Dilip K.¹^ORCID

Affiliation:

1. Department of Physics, Birla Institute of Technology Mesra, Ranchi 835215, India

Funder

University Grants Commission

Department of Atomic Energy, Government of India

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acsomega.2c07408

Reference43 articles.

1. Single-layer MoS2 transistors

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Two-Dimensional Molybdenum Trioxide and Dichalcogenides

4. Atomically ThinMoS2: A New Direct-Gap Semiconductor

5. Emerging Photoluminescence in Monolayer MoS2

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1. Unlocking the one-step recovery of solid S8 products through sulfur electro-oxidation in an acidic media;Applied Catalysis B: Environment and Energy;2024-12

2. Sensitive determination of mechanical and thermal properties of MoS2 multilayers using microcantilevers;Sensors and Actuators A: Physical;2024-09

3. The effect of sulfuration reaction rates with sulphur concentration gradient dependence on the growth pattern and morphological evolution of MoS₂ in laminar flow;Nanoscale;2024

4. 基于密度泛函理论的B、P掺杂MoS2/Gr异质结光电性能增强的调制机理;Laser & Optoelectronics Progress;2024

5. CVD Synthesis of MoS2 Using a Direct MoO2 Precursor: A Study on the Effects of Growth Temperature on Precursor Diffusion and Morphology Evolutions;Materials;2023-07-04

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