Molecular Dynamics Analysis of 6H-SiC Subsurface Damage by Nanofriction
Author:
Affiliation:
1. School of Mechanical and Electronic Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333403, Jiangxi, China
2. Laboratory of Ceramic Material Processing Technology Engineering, Jingdezhen 333403, Jiangxi, China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Jiangxi Province
Jiangxi Province
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acsomega.2c02115
Reference27 articles.
1. Properties of the structural defects during SiC–crystal–induced crystallization on the solid–liquid interface
2. Brittle–ductile transition during diamond turning of single crystal silicon carbide
3. Subsurface damages beneath fracture pits of reaction-bonded silicon carbide after ultra-precision grinding
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