Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios
Author:
Affiliation:
1. School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300132, China
2. Hebei Engineering Laboratory of Photoelectronic Functional Crystals, Hebei University of Technology, Tianjin 300130, China
Funder
Hebei Province Science and Technology Support Program
Department of Education of Hebei Province
National Natural Science Foundation of China
Tianjin City
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acsomega.2c01890
Reference31 articles.
1. The intrinsic thermal conductivity of AIN
2. CFD modeling of the high-temperature HVPE growth of aluminum nitride layers on c-plane sapphire: from theoretical chemistry to process evaluation
3. The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer
4. Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio
5. Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy
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