Interfacial Delamination at Multilayer Thin Films in Semiconductor Devices-Reference-Cited by-同舟云学术

Interfacial Delamination at Multilayer Thin Films in Semiconductor Devices

Published:2022-07-14 Issue:29 Volume:7 Page:25219-25228
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Kim Jin-Hoon¹,Kil Hye-Jun²,Lee Sangjun²,Park Jinwoo³,Park Jin-Woo²^ORCID

Affiliation:

1. Media Lab, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

2. Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea

3. Computational Science Engineering Team, Samsung Electronics Co., Ltd., Hwaseong 18448, Korea

Funder

Samsung

Yonsei University

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acsomega.2c02122

Reference46 articles.

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3. Lee, S. K.; Ma, S.M.; Seo, I.S.; Shin, H. S.; Kim, H.; Cross, A.; Baris, O.; Kim, D.; Lee, S. H.; Lange, S. Investigation of Novel Inspection Capability for 3D NAND device wordline inspection. In 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014), May 19–21, 2014; pp 278–282.

4. Mechanical Stress Distribution and the Effects of Process Parameter Changes in Vertical NAND Flash Memory

5. Nowak, E.; Kim, J.; Kwon, H.; Kim, Y.; Sim, J. S.; Lim, S.; Kim, D. S.; Lee, K.; Park, Y.; Choi, J.; Chung, C. Intrinsic Fluctuations in Vertical NAND Flash Memories. In Symposium on VLSI Technology (VLSIT), June 12–14, 2012; pp 21–22.

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