HF Etchant Solutions in Supercritical Carbon Dioxide for “Dry” Etch Processing of Microelectronic Devices-Reference-Cited by-同舟云学术

HF Etchant Solutions in Supercritical Carbon Dioxide for “Dry” Etch Processing of Microelectronic Devices

Published:2003-06-28 Issue:15 Volume:15 Page:2867-2869
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Jones Charles A.¹,Yang Dongxing¹,Irene Eugene A.¹,Gross Stephen M.¹,Wagner Mark¹,DeYoung James¹,DeSimone Joseph M.¹

Affiliation:

1. Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3290, Department of Chemical Engineering, North Carolina State University, Raleigh, North Carolina 27695-7565, and Micell Technologies, Raleigh, North Carolina 27617-8402

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm034235w

Reference30 articles.

1. A Study of the Dissolution of SiO[sub 2] in Acidic Fluoride Solutions

2. Determination of the Etching Kinetics for the Hydrofluoric Acid/Silicon Dioxide System

3. Silicon dioxide sacrificial layer etching in surface micromachining

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