Searching for Band-Dispersive and Defect-Tolerant Semiconductors from Element Substitution in Topological Materials-Reference-Cited by-同舟云学术

Searching for Band-Dispersive and Defect-Tolerant Semiconductors from Element Substitution in Topological Materials

Published:2022-03-03 Issue:10 Volume:144 Page:4685-4694
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Huang Menglin¹,Wang Shanshan²,Zhang Tao²,Chen Shiyou¹²³^ORCID

Affiliation:

1. Key Laboratory of Computational Physical Sciences (MOE), and State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China

2. Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai 200241, China

3. Shanghai Qi Zhi Institute, Shanghai 200030, China

Funder

National Natural Science Foundation of China

State Key Laboratory of ASIC and System, Fudan University

Young Scientist Project of MOE Innovation Platform

Shanghai Academic/Technology Research Leader

National Key Research and Development Program of China

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/jacs.2c01038

Reference78 articles.

1. Colloquium: Topological insulators

2. Topological Insulators in Three Dimensions

3. Topological insulators with inversion symmetry

4. Topological insulators and superconductors

5. Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

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