Comparison of Thin Film Sb 2 Se 3 Solar Cell Device Parameters: with Different Electron Transport Layer

Abstract

Abstract The paper describes the solar cell's design, ITO/CdS/Sb2Se3/CZTSe/Au. Experimental evidence that supports the model's predictions regarding output performance and current-voltage characteristics comes from CdS/Sb2Se3 solar cells with a hole transport layer (HTL). Sb2Se3 could be used in solar cells because it is non-toxic, affordable, and performs well. Because Sb2Se3 has a high-power conversion efficiency (6.5%), it is utilized as the absorber in thin-film solar cells. By simulating a best-practice solar cell configuration, including device optimization and band offset engineering, the SCAPS-1D simulator increased solar cell efficiency. The J-V characteristics of the simulated systems were simulated using SCAPS-1D to confirm the accuracy of the results. Current research focuses on the absorber for antimony selenide photovoltaic solar cells. The solar capacitance simulator was used to evaluate thin Sb2Se3 solar cells using SCAPS-1D software. From all the simulations, the conclusion arises that CZTSe as HTL gave the highest values of open-circuit voltage (VOC), i.e., 311mV, short circuit current (JSC), i.e., 28.246%, Fill Factor (FF), i.e., 45.48%, and Power Conversion Efficiency (PCE), i.e., 4%, was obtained through proposed solar cell architecture ITO/CdS/Sb2Se3/CZTSe/Au.