Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory-Reference-Cited by-同舟云学术

Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory

Published:2022-05-20 Issue:26 Volume:34 Page:2108261
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Li Tiantian¹,Wang Yong²,Li Wei²³,Mao Dun¹,Benmore Chris J.⁴,Evangelista Igor²,Xing Huadan¹,Li Qiu¹,Wang Feifan¹,Sivaraman Ganesh⁵,Janotti Anderson²,Law Stephanie²,Gu Tingyi¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering University of Delaware Newark DE 19716 USA

2. Department of Materials Science and Engineering University of Delaware Newark DE 19716 USA

3. Computer, Computational and Statistical Sciences Division Los Alamos National Laboratory Los Alamos NM 87545 USA

4. X‐ray Science Division Argonne National Laboratory Lemont IL 60439 USA

5. Data Science and Learning Division Argonne National Laboratory Lemont IL 60439 USA

Funder

Army Research Office

U.S. Department of Energy

Office of Science

Basic Energy Sciences

National Science Foundation

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202108261

Reference68 articles.

1. Parallel convolutional processing using an integrated photonic tensor core

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5. A New Family of Ultralow Loss Reversible Phase‐Change Materials for Photonic Integrated Circuits: Sb 2 S 3 and Sb 2 Se 3

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