Chlorination−Methylation of the Hydrogen-Terminated Silicon(111) Surface Can Induce a Stacking Fault in the Presence of Etch Pits
Author:
Affiliation:
1. Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125
Publisher
American Chemical Society (ACS)
Subject
Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis
Link
https://pubs.acs.org/doi/pdf/10.1021/ja055408g
Reference13 articles.
1. A New Opportunity in Silicon-Based Microelectronics
2. A Diferric Peroxo Complex with an Unprecedented Spin Configuration: AnS=2 System Arising from anS=5/2, 1/2 Pair
3. Synthesis and Characterization of DNA-Modified Silicon (111) Surfaces
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