Design of Epitaxially Strained Ag Film for Durable Ag-Based Contact to p-Type GaN-Reference-Cited by-同舟云学术

Design of Epitaxially Strained Ag Film for Durable Ag-Based Contact to p-Type GaN

Published:2011-10-04 Issue:11 Volume:11 Page:4943-4949
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Son Jun Ho¹,Yu Hak Ki¹,Song Yang Hee¹,Kim Buem Joon¹,Lee Jong-Lam¹

Affiliation:

1. Division of Advanced Materials Science and Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyungbuk, 790-784, Korea

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg200833y

Reference25 articles.

1. Prospects for LED lighting

2. Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics

3. Efficient and Directed Nano-LED Emission by a Complete Elimination of Transverse-Electric Guided Modes

4. III-nitride photonic-crystal light-emitting diodes with high extraction efficiency

5. Thermally Stable and Highly Reflective ITO/Ag-Based Ohmic Contacts to p-GaN

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