Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics-Reference-Cited by-同舟云学术

Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics

Published:2011-03-02 Issue:4 Volume:11 Page:1434-1438
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Guo Wei¹,Zhang Meng¹,Bhattacharya Pallab¹,Heo Junseok¹

Affiliation:

1. Center for Nanoscale Photonics and Spintronics, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl103649d

Reference41 articles.

1. Optoelectronic Devices

2. On the importance of radiative and Auger losses in GaN-based quantum wells

3. A numerical study of Auger recombination in bulk InGaN

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