From Oxide Surface to Organic Transistor Properties: The Nature and the Role of Oxide Gate Surface Defects
Author:
Affiliation:
1. Laboratoire d’Optoélectronique des Matériaux Moléculaires, STI-IMX-LOMM, Station 3, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp911167h
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1. Determination of trap distributions from current characteristics of pentacene field-effect transistors with surface modified gate oxide
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5. Molecular Self-Assembled Monolayers and Multilayers for Organic and Unconventional Inorganic Thin-Film Transistor Applications
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