Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects-Reference-Cited by-同舟云学术

Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects

Published:2015-10-06 Issue:41 Volume:7 Page:22775-22785
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Aghamohammadi Mahdieh¹,Rödel Reinhold¹,Zschieschang Ute¹,Ocal Carmen²,Boschker Hans¹,Weitz R. Thomas³⁴,Barrena Esther²,Klauk Hagen¹

Affiliation:

1. Max Planck Institute for Solid State Research, Heisenbergstr.1, 70569, Stuttgart, Germany

2. Instituto de Ciencia de Materiales de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Spain

3. BASF SE, GVE/T − J542s, 67056 Ludwigshafen, Germany

4. Innovation Lab GmbH, Speyerer Str. 4, 69115 Heidelberg, Germany

Funder

Generalitat de Catalunya

Bundesministerium für Bildung und Forschung

Ministerio de Economía y Competitividad

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b02747

Reference67 articles.

1. Stacked pentacene layer organic thin-film transistors with improved characteristics

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4. Pentacene-based organic thin-film transistors

5. Improved organic thin film transistor performance using chemically modified gate dielectrics

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