Impact of Four-Valent Doping on the Crystallographic Phase Formation for Ferroelectric HfO2 from First-Principles: Implications for Ferroelectric Memory and Energy-Related Applications-Reference-Cited by-同舟云学术

Impact of Four-Valent Doping on the Crystallographic Phase Formation for Ferroelectric HfO2 from First-Principles: Implications for Ferroelectric Memory and Energy-Related Applications

Published:2017-12-08 Issue:1 Volume:1 Page:254-264
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Künneth Christopher¹^ORCID,Materlik Robin¹,Falkowski Max¹,Kersch Alfred¹

Affiliation:

1. Department of Applied Sciences and Mechatronics, Munich University of Applied Sciences, Lothstr. 34, D-80335 Munich, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.7b00124

Reference53 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectricity in Simple Binary ZrO2 and HfO2

3. The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

4. Challenges for the DRAM cell scaling to 40nm

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