Chemical Stability and Electrical Performance of Dual-Active-Layered Zinc–Tin–Oxide/Indium–Gallium–Zinc–Oxide Thin-Film Transistors Using a Solution Process-Reference-Cited by-同舟云学术

Chemical Stability and Electrical Performance of Dual-Active-Layered Zinc–Tin–Oxide/Indium–Gallium–Zinc–Oxide Thin-Film Transistors Using a Solution Process

Published:2013-06-18 Issue:13 Volume:5 Page:6108-6112
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Chul Ho¹,Rim You Seung¹,Kim Hyun Jae¹

Affiliation:

1. School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am400943z

Reference33 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

3. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

4. High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates

5. Present status of amorphous In–Ga–Zn–O thin-film transistors

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