Electronic Bandgap and Edge Reconstruction in Phosphorene Materials
Author:
Affiliation:
1. Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
2. School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
Funder
New York State Foundation for Science, Technology and Innovation
U.S. Army Research Laboratory
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl502892t
Reference44 articles.
1. Phosphorene excites materials scientists
2. Black phosphorus field-effect transistors
3. Two-Dimensional Mono-Elemental Semiconductor with Electronically Inactive Defects: The Case of Phosphorus
4. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
5. Surface Structures of Black Phosphorus Investigated with Scanning Tunneling Microscopy
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