Abstract
Abstract
This study explores the spin photovoltaic potential within armchair phosphorene nanoribbons (APNRs) that feature a periodic distribution of monovacancies (MVs) under the influence of light radiation. We investigate spin-semiconducting behavior induced by MV defects by utilizing both the mean-field Hubbard approximation and the self-consistent non-equilibrium Green's function model. This behavior is characterized by localized and anisotropic band structures around the Fermi energy, particularly within the antiferromagnetic phase. The existence of spin-splitting band gaps in defective APNRs not only enables the crafting of spin-optoelectronic nanodevices but also allows for the manipulation of electronic structure behavior with applied electric fields in both the vertical and transverse directions. Notably, the implementation of electric fields, offering tunability in electronic structure, results in varied spin photovoltaic responses encompassing a broad spectrum of photon energies from visible to ultraviolet. This research reveals promising avenues for advancing the field of spin-optoelectronic devices by MVs in APNRs.